EM6AA160TS Datasheet, PDF (1/51 Pages) Etron Technology, Inc. – 16M x 16 bit DDR Synchronous DRAM (SDRAM)

EtronTech
EM6AA160TS
16M x 16 bit DDR Synchronous DRAM (SDRAM)
Etron Confidential
(Rev. 0.7 July/ 2008)
Features
• ^{Fast clock rate: 250/200MHz}
• ^{Differential Clock CK &} CK
• ^{Bi-directional DQS}
• ^{DLL enable/disable by EMRS}
• ^{Fully synchronous operation}
• ^{Internal pipeline architecture}
• ^{Four internal banks, 4M x 16-bit for each bank}
• ^{Programmable Mode and Extended Mode registers}
- CAS Latency: 3
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleaved
• ^{Individual byte write mask control}
• ^{DM Write Latency = 0}
• ^{Auto Refresh and Self Refresh}
• ^{8192 refresh cycles / 64ms}
• ^{Precharge & active power down}
• ^{Power supplies:}
VDD = 2.5V Ô 5%
VDDQ = 2.5V Ô 5%
• ^{Interface: SSTL_2 I/O Interface}
• ^{Package: 66 Pin TSOP II, 0.65mm pin pitch}
- Pb and Halogen free
Overview
The EM6AA160 SDRAM is a high-speed CMOS
double data rate synchronous DRAM containing 256
Mbits. It is internally configured as a quad 4M x 16
DRAM with a synchronous interface (all signals are
registered on the positive edge of the clock signal,
CK). Data outputs occur at both rising edges of CK
and _CK .d Read and write accesses to the SDRAM
are burst oriented; accesses start at a selected
location and continue for a programmed number of
locations in a programmed sequence. Accesses
begin with the registration of a BankActivate
command which is then followed by a Read or Write
command. The EM6AA160 provides programmable
Read or Write burst lengths of 2, 4, or 8. An auto
precharge function may be enabled to provide a
self-timed row precharge that is initiated at the end
of the burst sequence. The refresh functions, either
Auto or Self Refresh are easy to use. In addition,
EM6AA160 features programmable DLL option.
By having a programmable mode register and
extended mode register, the system can choose the
most suitable modes to maximize its performance.
These devices are well suited for applications
requiring high memory bandwidth, result in a device
particularly well suited to high performance main
memory and graphics applications.
Table 1. Ordering Information
Part Number
EM6AA160TS-4G
EM6AA160TS-5G
Clock Frequency
250MHz
200MHz
Data Rate
500Mbps/pin
400Mbps/pin
Power Supply
VDD 2.5V VDDQ 2.5V
VDD 2.5V VDDQ 2.5V
TS : indicates TSOPII package
G: indicates Pb and Halogen free
Package
TSOPII
TSOPII
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: [phone] FAX: [phone]
Etron Technology, Inc. reserves the right to change products or specification without notice.