EM6A9320BIB-4H Datasheet, PDF (1/61 Pages) Etron Technology, Inc. – 4M x 32 bit DDR Synchronous DRAM (SDRAM)

EtronTech
EM6A9320BIB
Etron Confidential
4M x 32 bit DDR Synchronous DRAM (SDRAM)
Advanced (Rev. 1.2, Aug. /2013)
Features
• ^{Fast clock rate: 200/250 MHz}
• ^{Differential Clock CK &} CK ^input
• ^{4 Bi-directional DQS. Data transactions on both}
edges of DQS (1DQS / Byte)
• ^{DLL aligns DQ and DQS transitions}
• ^{Edge aligned data & DQS output}
• ^{Center aligned data & DQS input}
• ^{4 internal banks, 1M x 32-bit for each bank}
• ^{Programmable mode and extended mode registers}
- CAS Latency: 2, 2.5, 3
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleave
• ^{All inputs except DQ’s & DM are at the positive}
edge of the system clock
• ^{4 individual DM control for write masking only}
• ^{Auto Refresh and Self Refresh}
• ^{4096 refresh cycles / 64ms}
• ^{Power supplies: V}DD & ^VDDQ ^{= 2.5V ± 0.2V}
• ^{Interface: SSTL_2 I/O compatible}
• ^{144-ball 12 x 12 x 1.4mm LFBGA package}
-Pb and Halogen Free
Overview
The EM6A9320 DDR SDRAM is a high-speed
CMOS double data rate synchronous DRAM
containing 128 Mbits. It is internally configured as a
quad 1M x 32 DRAM with a synchronous interface (all
signals are registered on the positive edge of the
clock signal, CK). Data outputs occur at both rising
edges of CK and _CK . Read and write accesses to the
SDRAM are burst oriented; accesses start at a
selected location and continue for a programmed
number of locations in a programmed sequence.
Accesses begin with the registration of a
BankActivate command, which is then followed by a
Read or Write command.
The EM6A9320 provides programmable Read or
Write burst lengths of 2, 4, 8. An auto precharge
function may be enabled to provide a self-timed row
precharge that is initiated at the end of the burst
sequence.The refresh functions, either Auto or Self
Refresh are easy to use.
In addition, EM6A9320 features programmable
DLL option. By having a programmable mode register
and extended mode register, the system can choose
the most suitable modes to maximize its performance.
These devices are well suited for applications
requiring high memory bandwidth, result in a device
particularly well suited to high performance main
memory and graphics applications.
Table1. Ordering Information
Part Number
Clock Frequency Data Rate
EM6A9320BIB-4H
250MHz
500Mbps/pin
EM6A9320BIB-5H
200MHz
400Mbps/pin
BI: indicates LFBGA package
B: indicates generation code
H: indicates Pb and Halogen Free for LFBGA Package
Power Supply
VDD 2.5V, VDDQ 2.5V
VDD 2.5V, VDDQ 2.5V
Package
LFBGA
LFBGA
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: [phone] FAX: [phone]
Etron Technology, Inc. reserves the right to change products or specification without notice.