EM68932DVKB Datasheet, PDF (1/40 Pages) Etron Technology, Inc. – 4M x 32 Mobile DDR Synchronous DRAM (SDRAM)

EtronTech
EM68932DVKB
4M x 32 Mobile DDR Synchronous DRAM (SDRAM)
Etron Confidential
Advanced (Rev. 1.0 Aug. /2009)
Features
• ^{Fast clock rate: 166/133 MHz}
• ^{Differential Clock CK &} CK
• ^{Bi-directional DQS}
• ^{Four internal banks, 1M x 32-bit for each bank}
• ^{Edge-aligned with read data, centered in write data}
• ^{Programmable Mode and Extended Mode Registers}
- CAS Latency: 2, or 3
- Burst length: 2, 4, or 8
- Burst Type: Sequential & Interleaved
- PASR (Partial Array Self Refresh)
- Auto TCSR (Temperature Compensated Self
Refresh)
- DS (Drive Strength)
• ^{Individual byte writes mask control}
• ^{DM Write Latency = 0}
• ^{Precharge Standby Current = 100 µA}
• ^{Self Refresh Current = 200 µA}
• ^{Deep power-down Current = 10 µA max. at 85℃}
• ^{Auto Refresh and Self Refresh}
• ^{4096 refresh cycles / 64ms}
• ^{No DLL (Delay Lock Loop), to reduce power; CK to}
DQS is not synchronized.
• ^{Power supplies: V}DD ^{& V}DDQ ^{= +1.8V+0.15V/-0.1V}
• ^{Interface: LVCMOS}
• ^{Ambient Temperature T}A ^{= -25 ~ 85℃,}
• ^{90-ball 8mm x 13mm VFBGA package}
- Pb and Halogen Free
Overview
The EM68932D is 134,217,728 bits of double data
rate synchronous DRAM organized as 4 banks of
1,048,576 words by 32 bits. The synchronous
operation with Data Strobe allows extremely high
performance. EM68932D is applied to reduce
leakage and refresh currents while achieving very
high speed. I/O transactions are possible on both
edges of the clock. The ranges of operating
frequencies, programmable burst length and
programmable latencies allow the device to be
useful for a variety of high performance memory
system applications.
Table 1. Ordering Information
Part Number Clock Frequency IDD6 Package
EM68932DVKB-6H
166MHz
200 µA VFBGA
EM68932DVKB-75H
133MHz
VK: indicates VFBGA package
200 µA VFBGA
B: indicates Generation Code
H: indicates Pb and Halogen Free for VFBGA Package
Figure 1. Ball Assignment (Top View)
1
2
3
…
7
8
9
A VSS DQ31 VSSQ
VDDQ DQ16 VDD
B VDDQ_. DQ29 DQ30
C VSSQ DQ27 DQ28
DQ17_. DQ18 VSSQ
DQ19 DQ20 VDDQ
D VDDQ DQ25 DQ26
DQ21 DQ22 VSSQ
E VSSQ DQS3 DQ24
DQ23 DQS2 VDDQ
F VDD DM3 NC
NC DM2 VSS
G CKE CK
CK
WE CAS RAS
H
A9
A11
NC
CS
BA0 BA1
J A6
A7
A8
A10/AP A0
A1
K
A4
DM1
A5
A2
DM0
A3
L VSSQ DQS1 DQ8
DQ7 DQS0 VDDQ
M VDDQ DQ9 DQ10
DQ5 DQ6 VSSQ
N VSSQ DQ11 DQ12
DQ3 DQ4 VDDQ
P VDDQ DQ13 DQ14
DQ1 DQ2 VSSQ
R VSS DQ15 VSSQ
VDDQ DQ0 VDD
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: [phone] FAX: [phone]
Etron Technology, Inc. reserves the right to change products or specification without notice.