EM68916DVAA Datasheet, PDF (1/40 Pages) Etron Technology, Inc. – 8M x 16 Mobile DDR Synchronous DRAM (SDRAM)

EtronTech
EM68916DVAA
8M x 16 Mobile DDR Synchronous DRAM (SDRAM)
Etron Confidential
Advanced (Rev. 1.0 Apr. /2009)
Features
• ^{Fast clock rate: 166/133 MHz}
• ^{Differential Clock CK &} CK
• ^{Bi-directional DQS}
• ^{Four internal banks, 2M x 16-bit for each bank}
• ^{Edge-aligned with read data, centered in write}
data
• ^{Programmable Mode and Extended Mode Registers}
- _CAS Latency: 2, or 3
- Burst length: 2, 4, or 8
- Burst Type: Sequential & Interleaved
- PASR (Partial Array Self Refresh)
- Auto TCSR (Temperature Compensated Self
Refresh)
- DS (Drive Strength)
• ^{Individual byte writes mask control}
• ^{DM Write Latency = 0}
• ^{Precharge Standby Current = 100 µA}
• ^{Self Refresh Current = 200 µA}
• ^{Deep power-down Current = 10 µA max. at 85Ċ}
• ^{Auto Refresh and Self Refresh}
• ^{4096 refresh cycles / 64ms}
• ^{No DLL (Delay Lock Loop), to reduce power; CK to}
DQS is not synchronized.
• ^{Power supplies: V}DD ^{& V}DDQ ^{= +1.8V+0.15V/-0.1V}
• ^{Interface: LVCMOS}
• ^{Ambient Temperature T}A ^{= -25 ~ 85Ċ,}
• ^{60-ball 8mm x 10mm VFBGA package}
- Pb free and Halogen free
Table 1. Ordering Information
Part Number
Clock
Frequency
Data Rate
IDD6 Package
EM68916DVAA-6H 166MHz 333Mbps/pin 200 µA VFBGA
EM68916DVAA-75H 133MHz 266Mbps/pin 200 µA VFBGA
VA: indicates VFBGA package
A: indicates Generation Code
H: indicates Pb and Halogen Free for VFBGA Package
Figure 1. Ball Assignment (Top View)
1
2
3
n
7
8
9
A
VSS
DQ15
VSSQ
VDDQ
DQ0
VDD
B
VDDQ
DQ13
DQ14
DQ1
DQ2
VSSQ
C
VSSQ
DQ11
DQ12
DQ3
DQ4
VDDQ
D VDDQ
DQ9
DQ10
DQ5
DQ6
VSSQ
E
VSSQ
UDQS
DQ8
F
VSS
UDM
NC
G
CKE
CK
CK
H
A9
A11
NC
DQ7
LDQS VDDQ
NC
LDM
VDD
WE
CAS
RAS
CS
BA0
BA1
J
A6
A7
A8
K
VSS
A4
A5
A10/AP
A0
A2
A3
A1
VDD
Overview
The EM68916D is 134,217,728 bits of double data
rate synchronous DRAM organized as 4 banks of
2,097,152 words by 16 bits. The synchronous
operation with Data Strobe allows extremely high
performance. EM68916D is applied to reduce
leakage and refresh currents while achieving very
high speed. I/O transactions are possible on both
edges of the clock. The ranges of operating
frequencies, programmable burst length and
programmable latencies allow the device to be
useful for a variety of high performance memory
system applications.
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: [phone] FAX: [phone]
Etron Technology, Inc. reserves the right to change products or specification without notice.