EM669325 Datasheet, PDF (1/51 Pages) Etron Technology, Inc. – 4M x 32 Low Power SDRAM (LPSDRAM)

EtronTech
EM669325
4M x 32 Low Power SDRAM (LPSDRAM)
Preliminary (Rev 0.6 Sep./2003)
Features
• Clock rate: 133/125/100 MHz
• Fully synchronous operation
• Internal pipelined architecture
• Four internal banks (1M x 32bit x 4bank)
• Programmable Mode
- CAS# Latency: 1, 2 & 3
- Burst Length: 1, 2, 4, 8, or full page
- Burst Type: Sequential & Interleave
- Burst-Read-Single-Write
• Burst stop function
• Individual byte controlled by DQM0-3
• Auto Refresh and Self Refresh
• 4096 refresh cycles/64ms
• Single 3.0V, or 3.3V power supply
• Interface: LVTTL
•Package : 90 ball-FBGA, 11x13mm, Lead Free
Ordering Information
Part Number
Frequency
EM669325BG-7.5G^(*)
133MHz
EM669325BG-8G^(*)
125MHz
EM669325BG-1H/LG^(*)
100MHz
(*) : G indicates Lead free package
Package
11x13 BGA
11x13 BGA
11x13 BGA
Pin Assignment : Top View
1
2
3
A
DQ26
B
DQ28
C
VSSQ
D
VSSQ
E
VDDQ
F
VSS
G
A4
H
A7
J
CLK
K
DQM1
L
VDDQ
M
VSSQ
N
VSSQ
P
DQ11
R
DQ13
DQ24
VDDQ
DQ27
DQ29
DQ31
DQM3
A5
A8
CKE
NC
DQ8
DQ10
DQ12
VDDQ
DQ15
VSS
VSSQ
DQ25
DQ30
NC
A3
A6
NC
A9
NC
VSS
DQ9
DQ14
VSSQ
VSS
4
5
6
7
8
9
VDD
VDDQ
DQ22
DQ17
NC
A2
A10
NC
BA0
CAS#
VDD
DQ6
DQ1
VDDQ
VDD
DQ23
VSSQ
DQ20
DQ18
DQ16
DQM2
A0
BA1
CS#
WE#
DQ7
DQ5
DQ3
VSSQ
DQ0
DQ21
DQ19
VDDQ
VDD1Q
VSSQ
VDD
A1
A11
RAS#
DQM0
VSSQ
VDDQ
VDDQ
DQ4
DQ2
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C
TEL: [phone] FAX: [phone]
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.