EM658160 Datasheet, PDF (1/26 Pages) Etron Technology, Inc. – 4M x 16 DDR Synchronous DRAM (SDRAM)

Et r onT ec h
EM658160
Etron Confidential
4M x 16 DDR Synchronous DRAM (SDRAM)
(Rev. 1.1 Jan./2002)
Features
Pin Assignment (Top View)
• Fast clock rate: 300/285/250/200/166/143/125MHz
• Differential Clock CK & /CK
• Bi-directional DQS
• DLL enable/disable by EMRS
• Fully synchronous operation
• Internal pipeline architecture
• Four internal banks, 1M x 16-bit for each bank
• Programmable Mode and Extended Mode registers
- /CAS Latency: 2, 2.5, 3
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleaved
• Individual byte write mask control
• DM Write Latency = 0
• Auto Refresh and Self Refresh
• 4096 refresh cycles / 64ms
• Precharge & active power down
• Power supplies: VDD = 3.3V ± 0.3V
VDDQ = 2.5V ± 0.2V
• Interface: SSTL_2 I/O Interface
• Package: 66 Pin TSOP II, 0.65mm pin pitch
Ordering Information
Part Number
EM658160TS-3.3
EM658160TS-3.5
EM658160TS-4
EM658160TS-5
EM658160TS-6
EM658160TS-7
EM658160TS-8
Frequency
300MHz
285MHz
250MHz
200MHz
166MHz
143MHz
125MHz
Package
TSOP II
TSOP II
TSOP II
TSOP II
TSOP II
TSOP II
TSOP II
VDD 1
DQ0 2
VDDQ 3
DQ1 4
DQ2 5
VSSQ 6
DQ3 7
DQ4 8
VDDQ 9
DQ5 10
DQ6 11
VSSQ 12
DQ7 13
NC 14
VDDQ 15
LDQS 16
NC 17
VDD 18
NC 19
LDM 20
/WE 21
/CAS 22
/RAS 23
/CS 24
NC 25
BS0 26
BS1 27
A10/AP 28
A0 29
A1 30
A2 31
A3 32
VDD 33
66 VSS
65 DQ15
64 VSSQ
63 DQ14
62 DQ13
61 VDDQ
60 DQ12
59 DQ11
58 VSSQ
57 DQ10
56 DQ9
55 VDDQ
54 DQ8
53 NC
52 VSSQ
51 UDQS
50 NC
49 VREF
48 VSS
47 UDM
46 /CK
45 CK
44 CKE
43 NC
42 NC
41 A11
40 A9
39 A8
38 A7
37 A6
36 A5
35 A4
34 VSS
Overview
The EM658160 SDRAM is a high-speed CMOS
double data rate synchronous DRAM containing 64
Mbits. It is internally configured as a quad 1M x 16
DRAM with a synchronous interface (all signals are
registered on the positive edge of the clock signal, CK).
Data outputs occur at both rising edges of CK and /CK.
Read and write accesses to the SDRAM are burst
oriented; accesses start at a selected location and
continue for a programmed number of locations in a
programmed sequence. Accesses begin with the
registration of a BankActivate command which is then
followed by a Read or Write command. The EM658160
provides programmable Read or Write burst lengths of 2,
4, 8, full page.
An auto precharge function may be enabled to
provide a self-timed row precharge that is initiated at the
end of the burst sequence. The refresh functions, either
Auto or Self Refresh are easy to use. In addition,
EM658160 features programmable DLL option. By
having a programmable mode register and extended
mode register, the system can choose the most suitable
modes to maximize its performance. These devices are
well suited for applications requiring high memory
bandwidth, result in a device particularly well suited to
high performance main memory and graphics
applications.
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: [phone] FAX: [phone]
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.