EM638325 Datasheet, PDF (1/72 Pages) Etron Technology, Inc. – 2M x 32 Synchronous DRAM (SDRAM)

EtronTech
EM638325
2M x 32 Synchronous DRAM (SDRAM)
Preliminary (Rev 1.4 October/2005)
Features
• Clock rate: 200/183/166/143/125/100 MHz
• Fully synchronous operation
• Internal pipelined architecture
• Four internal banks (512K x 32bit x 4bank)
• Programmable Mode
- CAS# Latency: 2 or 3
- Burst Length: 1, 2, 4, 8, or full page
- Burst Type: interleaved or linear burst
- Burst-Read-Single-Write
• Burst stop function
• Individual byte controlled by DQM0-3
• Auto Refresh and Self Refresh
• 4096 refresh cycles/64ms
• Single +3.3V ± 0.3V power supply
• Interface: LVTTL
• Package: 400 x 875 mil, 86 Pin TSOP II, 0.50mm
pin pitch
• Lead Free Package available
Ordering Information
Part Number
Leaded / Lead Free Package
EM638325TS-5/-5G
EM638325TS-5.5/-5.5G
EM638325TS-6/-6G
EM638325TS-7/-7G
EM638325TS-8/-8G
EM638325TS-10/-10G
Frequency
200MHz
183MHz
166MHz
143MHz
125MHz
100MHz
Package
TSOP II
TSOP II
TSOP II
TSOP II
TSOP II
TSOP II
Pin Assignment (Top View)
VDD
1
DQ0
2
VDDQ
3
DQ1
4
DQ2
5
VSSQ
6
DQ3
7
DQ4
8
VDDQ
9
DQ5
10
DQ6
11
VSSQ
12
DQ7
13
NC
14
VDD
15
DQM0
16
/WE
17
/CAS
18
/RAS
19
/CS
20
NC
21
BS0
22
BS1
23
A10/AP
24
A0
25
A1
26
A2
27
DQM2
28
VDD
29
NC
30
DQ16
31
VSSQ
32
DQ17
33
DQ18
34
VDDQ
35
DQ19
36
DQ20
37
VSSQ
38
DQ21
39
DQ22
40
VDDQ
41
DQ23
42
VDD
43
86
VSS
85
DQ15
84
VSSQ
83
DQ14
82
DQ13
81
VDDQ
80
DQ12
79
DQ11
78
VSSQ
77
DQ10
76
DQ9
75
VDDQ
74
DQ8
73
NC
72
VSS
71
DQM1
70
NC
69
NC
68
CLK
67
CKE
66
A9
65
A8
64
A7
63
A6
62
A5
61
A4
60
A3
59
DQM3
58
VSS
57
NC
56
DQ31
55
VDDQ
54
DQ30
53
DQ29
52
VSSQ
51
DQ28
50
DQ27
49
VDDQ
48
DQ26
47
DQ25
46
VSSQ
45
DQ24
44
VSS
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C
TEL: [phone] FAX: [phone]
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.