EM636165TS Datasheet, PDF (1/52 Pages) Etron Technology, Inc. – 1M x 16 bit Synchronous DRAM (SDRAM)

EtronTech
EM636165TS
1M x 16 bit Synchronous DRAM (SDRAM)
Advanced (Rev. 5.0, Nov. /2011)
Features
• ^{Fast access time: 4.5/5.4/5.4ns}
• ^{Fast clock rate: 200/166/143 MHz}
• ^{Self refresh mode: standard}
• ^{Internal pipelined architecture}
• ^{512K word x 16-bit x 2-bank}
• ^{Programmable Mode registers}
- CAS Latency: 2, or 3
- Burst Length: 1, 2, 4, 8, or full page
- Burst Type: Sequential or Interleaved
- Burst stop function
• ^{Individual byte controlled by LDQM and UDQM}
• ^{Auto Refresh and Self Refresh}
• ^{4096 refresh cycles/64ms}
• ^{CKE power down mode}
• ^{JEDEC standard +3.3V}±^{0.3V power supply}
• ^{Operating Temperature: TA = 0~70°C}
• ^{Interface: LVTTL}
• ^{50-pin 400 mil plastic TSOP II package}
-Pb and Halogen Free
Overview
The EM636165 SDRAM is a high-speed CMOS
synchronous DRAM containing 16 Mbits. It is
internally configured as a dual 512K word x 16
DRAM with a synchronous interface (all signals are
registered on the positive edge of the clock signal,
CLK). Each of the 512K x 16 bit banks is organized
as 2048 rows by 256 columns by 16 bits. Read and
write accesses to the SDRAM are burst oriented;
accesses start at a selected location and continue
for a programmed number of locations in a
programmed sequence. Accesses begin with the
registration of a BankActivate command which is
then followed by a Read or Write command.
The EM636165 provides for programmable
Read or Write burst lengths of 1, 2, 4, 8, or full page,
with a burst termination option. An auto precharge
function may be enabled to provide a self-timed row
precharge that is initiated at the end of the burst
sequence. The refresh functions, either Auto or Self
Refresh are easy to use. By having a
programmable mode register, the system can
choose the most suitable modes to maximize its
performance. These devices are well suited for
applications requiring high memory bandwidth and
particularly well suited to high performance PC
applications
Table 1. Key Specifications
EM636165
tCK3 ^{Clock Cycle time(min.)}
tRAS ^{Row Active time (min.)}
tAC3 ^{Access time from CLK (max.)}
tRC
Row Cycle time(min.)
-5/6/7
5/6/7 ns
40/42/42 ns
4.5/5.4/5.4 ns
55/60/63 ns
Table 2. Ordering Information
Part Number
Frequency
EM636165TS-5G 200MHz
EM636165TS-6G 166MHz
EM636165TS-7G 143MHz
TS: indicates TSOP II package
G: indicates Pb and Halogen Free
Type
TSOPII
TSOPII
TSOPII
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: [phone] FAX: [phone]
Etron Technology, Inc. reserves the right to change products or specification without notice.