BC846BDW1T1 Datasheet, PDF (4/5 Pages) ON Semiconductor – Dual General Purpose Transistors

BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
TYPICAL CHARACTERISTICS
10
400
300
7.0
200
5.0
100
3.0
80
60
2.0
40
30
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
V _R , REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
20
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
I _C , COLLECTOR CURRENT (mAdc)
Figure 6. Current–Gain – Bandwidth Product
1.0
2.0
1.0
0.5
0.2
0.1 0.2
2.0
1.0
10
100
I _C , COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
0.8
0.6
0.4
0.2
0
0.2
0.5 1.0 2.0
5.0 10 20
50 100 200
I _C , COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
-1.0
1.6
-1.4
1.2
-1.8
0.8
-2.2
0.4
-2.6
0
0.02
0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
I _B , BASE CURRENT (mA)
Figure 9. Collector Saturation Region
-3.0
0.2
0.5 1.0 2.0
5.0 10 20
50 100 200
I _C , COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
BC846b–4/5