MUN5311W Datasheet, PDF (2/13 Pages) E-Tech Electronics LTD – Dual Bias Resistor Transistors

MUN5311DW1T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device
Package
MUN5311DW1T1
SOT–363
MUN5312DW1T1
SOT–363
MUN5313DW1T1
SOT–363
MUN5314DW1T1
SOT–363
MUN5315DW1T1 (Note 3.) SOT–363
MUN5316DW1T1 (Note 3.) SOT–363
MUN5330DW1T1 (Note 3.) SOT–363
MUN5331DW1T1 (Note 3.) SOT–363
MUN5332DW1T1 (Note 3.) SOT–363
MUN5333DW1T1 (Note 3.) SOT–363
MUN5334DW1T1 (Note 3.) SOT–363
MUN5335DW1T1 (Note 3.) SOT–363
Marking
11
12
13
14
15
16
30
31
32
33
34
35
R ₁(K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
R ₂(K)
10
22
47
47
1.0
2.2
4.7
47
47
47
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
ELECTRICAL CHARACTERISTICS
(T _A = 25°C unless otherwise noted, common for Q ₁ and Q ₂ , – minus sign for Q ₁ (PNP) omitted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V _CB = 50 V, I _E = 0)
I _CBO
–
– 100 nAdc
Collector-Emitter Cutoff Current (V _CE = 50 V, I _B = 0)
I _CEO
Emitter-Base Cutoff Current MUN5311DW1T1
I _EBO
–
– 500 nAdc
–
– 0.5 mAdc
(V _EB = 6.0 V, I _C = 0)
MUN5312DW1T1
MUN5313DW1T1
–
– 0.2
–
– 0.1
MUN5314DW1T1
–
– 0.2
MUN5315DW1T1
–
– 0.9
MUN5316DW1T1
–
– 1.9
MUN5330DW1T1
–
– 4.3
MUN5331DW1T1
–
– 2.3
MUN5332DW1T1
–
– 1.5
MUN5333DW1T1
–
– 0.18
MUN5334DW1T1
–
– 0.13
MUN5335DW1T1
Collector-Base Breakdown Voltage (I C =10 µA, I E = 0)
–
V (BR)CBO
50
– 0.2
–
– Vdc
Collector-Emitter Breakdown Voltage(Note 4.)(IC =2.0 mA,I B=0) V (BR)CEO 50
–
– Vdc
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
MUN5311dw–2/13