MC74VHC1G05 Datasheet, PDF (2/4 Pages) ON Semiconductor – Inverterwith Open Drain Output

MC74VHC1G05
MAXIMUM RATINGS (Note 1.)
Symbol
Parameter
Value
Unit
V CC
V IN
V OUT
I IK
I OK
I OUT
I CC
PD
θ JA
TL
TJ
T stg
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current, per Pin
V < GND; V > V
OUT
OUT
CC
DC Supply Current, V CC and GND
Power dissipation in still air
SC–88A, TSOP–5
Thermal resistance
SC–88A, TSOP–5
Lead Temperature, 1 mm from Case for 10 s
Junction Temperature Under Bias
Storage temperature
– 0.5 to + 7.0
– 0.5 to +7.0
– 0.5 to +7.0
–20
+20
+ 25
+50
200
333
260
+ 150
–65 to +150
V
V
V
mA
mA
mA
mA
mW
°C/W
°C
°C
°C
V ESD
ESD Withstand Voltage
Human Body Model (Note 2)
>2000
V
Machine Model (Note 3)
> 200
Charged Device Model (Note 4)
N/A
I LATCH–UP
Latch–Up Performance Above V CC and Below GND at 125°C (Note 5)
± 500
mA
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
V CC
DC Supply Voltage
V IN
DC Input Voltage
V OUT
DC Output Voltage
TA
Operating Temperature Range
t r ,t f
Input Rise and Fall Time
V _CC = 3.3 ± 0.3 V
V _CC = 5.0 ± 0.5 V
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Time,
Time,
Temperature °C
Hours
Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
1
140
8,900
1.0
1
Min
Max
Unit
2.0
5.5
V
0.0
5.5
V
0.0
7.0
V
– 55
+ 125
°C
0
100
ns/V
0
20
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time
Junction Temperature
VH5–2/4