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GTT2604 Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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ISSUED DATE :2006/03/28
REVISED DATE :
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.02
-
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) 1.0
-
3.0
V VDS=VGS, ID=250uA
gfs
-
7
-
S VDS=10V, ID=4.8A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±20V
Drain-Source Leakage Current(Tj=25к)
-
-
1
uA VDS=30V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
25
uA VDS=24V, VGS=0
Static Drain-Source On-Resistance2
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
RDS(ON)
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Symbol
VSD
Trr
Qrr
-
-
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
6
2
3
6
8
15
4
440
105
35
Typ.
-
15
7
45
65
10
-
-
-
-
-
-
705
-
-
Max.
1.2
-
-
VGS=10V, ID=4.8A
m
VGS=4.5V, ID=2.4A
ID=4.8A
nC VDS=24V
VGS=4.5V
VDS=15V
ID=1A
ns VGS=10V
RG=3.3
RD=15
VGS=0V
pF VDS=25V
f=1.0MHz
Unit
Test Conditions
V IS=4.8A, VGS=0V
ns IS=4.8A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 156к/W when mounted on Min. copper pad.
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