English
Language : 

GTT2603 Datasheet, PDF (2/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET
◁
ISSUED DATE :2006/03/28
REVISED DATE :
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS -20
-
-
V VGS=0, ID=-250uA
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
-0.1
-
V/к Reference to 25к, ID=-1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) -0.5
-
-1.2
V VDS=VGS, ID=-250uA
gfs
-
9
-
S VDS=-5V, ID=-2.8A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±12V
Drain-Source Leakage Current(Tj=25к)
-
-
-1
uA VDS=-20V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=55к)
-
-
-10
uA VDS=-16V, VGS=0
-
-
53
VGS=-10V, ID=-4.5A
-
Static Drain-Source On-Resistance2 RDS(ON)
-
-
65
VGS=-4.5V, ID=-4.2A
m
-
120
VGS=-2.5V, ID=-2.0A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
250
VGS=-1.8V, ID=-1.0A
- 10.6 16
ID=-4.2A
- 2.32 -
nC VDS=-16V
- 3.68 -
VGS=-4.5V
-
5.9
-
-
3.6
-
- 32.4 -
-
2.6
-
VDS=-15V
ID=-4.2A
ns VGS=-10V
RG=6
RD=3.6
-
740 1200
VGS=0V
-
167
-
pF VDS=-15V
-
126
-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
27.7
22
Max.
-1.2
-
-
Unit
Test Conditions
V IS=-1.2A, VGS=0V
ns IS=-4.2A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 156к/W when mounted on Min. copper pad.
2/4
 ▷