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| GE15N03 Datasheet, PDF (2/5 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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ISSUED DATE :2005/01/25
REVISED DATE :
Electrical Characteristics(Tj = 25Ä Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
Gate Threshold Voltage
VGS(th)
1.0
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
-
0.037 -
-
3.0
- Í100
-
25
-
250
V VGS=0, ID=250uA
V/к Reference to 25к, ID=1mA
V VDS=VGS, ID=250uA
nA VGS= Í20V
uA VDS=30V, VGS=0
uA VDS=24V, VGS=0
-
Static Drain-Source On-Resistance RDS(ON)
-
-
80
mÓ¨ VGS=10V, ID=8A
-
100
VGS=4.5V, ID=6A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (âMillerâ) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
-
5.4
-
-
1.3
-
-
3.6
-
-
3.6
-
-
19.8
-
-
13
-
-
3.2
-
ID=8A
nC VDS=24V
VGS=5V
VDS=15V
ID=8A
ns VGS=10V
RG=3.3Ó¨
RD=1.9Ó¨
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
-
260
-
-
144
-
-
13
-
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current(Body Diode)
Pulsed Source Current(Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.3
15
50
Unit
Test Conditions
V IS=15A, VGS=0V, Tj=25к
A VD= VG=0V, VS=1.3V
A
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthÐ300us, duty cycleÐ2%.
GE15N03
Page: 2/5
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