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| G3314 Datasheet, PDF (2/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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CORPORATION ISSUED DATE :2005/03/04
REVISED DATE :
Electrical Characteristics(Tj = 25Ä Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS -30
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
Gate Threshold Voltage
VGS(th) -1.0
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
-
V VGS=0, ID=-250uA
-0.1
-
V/к Reference to 25к, ID=-1mA
-
-
V VDS=VGS, ID=-250uA
2
-
S VDS=-10V, ID=-1.7A
-
Í100 nA VGS= Í20V
-
-1
uA VDS=-30V, VGS=0
-
-10
uA VDS=-30V, VGS=0
-
-
240
VGS=-10V, ID=-1.7A
-
Static Drain-Source On-Resistance2 RDS(ON)
-
-
270
mÓ¨ VGS=-10V, ID=-0.8A
-
460
VGS=-4.5V, ID=-1.3A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (âMillerâ) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
500
VGS=-4V, ID=-0.4A
-
6.2
-
ID=-1.7A
-
1.4
-
nC VDS=-15V
-
0.3
-
VGS=-10V
-
7.6
-
-
8.2
-
-
17.5
-
-
9
-
VDS=-15V
ID=-1A
ns VGS=-10V
RG=6Ó¨
RD=15Ó¨
-
230
-
- 130.4 -
-
40
-
VGS=0V
pF VDS=-15V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.2
-1
-6.4
Unit
Test Conditions
V IS=-1.25A, VGS=0V
A VD= VG=0V, VS=-1.2V
A
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthÐ300us, duty cycleÐ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board;270к/W when mounted on min. copper pad.
2/4
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