G3018 Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL MOSFET

ISSUED DATE :2005/11/30
REVISED DATE :
Electrical Characteristics(Tj = 25ć Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BV_DSS
30
-
-
V V_GS=0, I_D=250uA
Gate Threshold Voltage
V_GS(th) 0.8
-
2.0
V V_DS=V_GS, I_D=0.1mA
Forward Transconductance
g_fs
20
-
-
mS V_DS=3V, I_D=10mA
Gate-Source Leakage Current
I_GSS
-
-
±1
uA V_GS= ±20V
Drain-Source Leakage Current
I_DSS
-
-
1
uA V_DS=30V, V_GS=0
-
Static Drain-Source On-Resistance R_DS(ON)
-
5
8
7
13
V_GS=4V, I_D=10mA
V_GS=2.5V, I_D=1mA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
C_iss
-
-
50
V_GS=0V
C_oss
-
-
25
pF _VDS=5V
C_rss
-
-
5
f=1.0MHz
Parameter
Forward On Voltage²
Symbol
V_SD
Min.
-
Typ.
0.84
Max.
1.5
Unit
Test Conditions
V I_S=100mA, V_GS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in² copper pad of FR4 board; 270к/W when mounted on Min. copper pad.
G3018
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