G2402 Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

CORPORATION ISSUED DATE :2004/11/22
REVISED DATE :2005/03/22B
Electrical Characteristics(Tj = 25ć Unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
Breakdown Voltage Temperature Coefficient
ϦBVDSS/ϦTj
-
Gate Threshold Voltage
VGS(th)
0.7
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
-
V
VGS=0, ID=250uA
0.1
-
V/к Reference to 25к, ID=1mA
-
1.2
V
VDS= VGS, ID=250uA
6
-
S
VDS=10V, ID=0.47A
-
̈́100
nA VGS= ̈́12V
-
1.0
uA
VDS=20V, VGS=0
-
10
uA
VDS=20V, VGS=0
Static Drain-Source On-Resistance²
Total Gate Charge²
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time²
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
RDS(ON)
-
-
250
mÓ¨ ^{ID=0.93A, VGS=4.5V}
-
350
ID=0.47A, VGS=2.7V
Qg
-
4.4
-
ID=3.6A
Qgs
-
0.6
-
nC VDS=10V
Qgd
-
1.9
-
VGS=4.5V
Td(on)
Tr
Td(off)
Tf
-
5.2
-
-
37
-
-
15
-
-
5.7
-
VDS=10V
ID=3.6A
ns
RG=6Ó¨
VGS=5v
RD=2.8Ó¨
Ciss
-
145
-
VGS=0V
Coss
-
100
-
pF VDS=10V
Crss
-
50
-
f=1.0MHz
Source-Drain Diode
Forward On Voltage²
VSD
Continuous Source Current(Body Diode)
IS
Pulsed Source Current (Body Diode) ¹
ISM
-
-
1.2
V
IS=1.6A, VGS=0 Tj=25к
-
-
1
A
VD= VG=0V, VS=1.2V
-
-
7.4
A
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in² copper pad of FR4 board;270к/w when mounted on min. copper pad.
Characteristics Curve
2/4