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| G2314 Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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ISSUED DATE :2005/05/16
REVISED DATE :
Electrical Characteristics(Tj = 25Ä Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
Gate Threshold Voltage
VGS(th)
0.5
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
0.02
-
7.0
-
-
-
-
-
1.2
-
Í100
1
10
V VGS=0, ID=250uA
V/к Reference to 25к, ID=1mA
V VDS=VGS, ID=250uA
S VDS=5V, ID=3A
nA VGS= Í12V
uA VDS=20V, VGS=0
uA VDS=16V, VGS=0
-
Static Drain-Source On-Resistance RDS(ON)
-
Total Gate Charge2
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain (âMillerâ) Change
Turn-on Delay Time2
Qgd
-
Td(on)
-
Rise Time
Tr
-
Turn-off Delay Time
Td(off)
-
Fall Time
Tf
-
Input Capacitance
Ciss
-
Output Capacitance
Coss
-
Reverse Transfer Capacitance
Crss
-
Gate Resistance
Rg
-
-
75
VGS=4.5V, ID=3.5A
mÓ¨
-
125
VGS=2.5V, ID=1.2A
4
7
ID=3A
0.7
-
nC VDS=16V
2
-
VGS=4.5V
6
-
VDS=15V
8
-
ID=1A
ns VGS=5V
10
-
RG=3.3Ó¨
3
-
RD=15Ó¨
230 370
55
-
40
-
VGS=0V
pF VDS=20V
f=1.0MHz
1.1 1.7 Ó¨ f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
16
8
Max.
1.2
-
-
Unit
Test Conditions
V IS=1.2A, VGS=0V
ns IS=3A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthÐ300us, duty cycleÐ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, t Ð10sec; 270к/W when mounted on Min.
copper pad.
2/4
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