English
Language : 

G2308E Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
◁
ISSUED DATE :2006/01/16
REVISED DATE :
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
-
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.1
-
V VGS=0, ID=250uA
-
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
VGS(th) 0.5
-
1.2
V VDS=VGS, ID=250uA
gfs
-
1
-
S VDS=5V, ID=1.2A
IGSS
-
-
̈́10 uA VGS= ±6V
Drain-Source Leakage Current(Tj=25к)
-
-
1
uA VDS=20V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
10
uA VDS=16V, VGS=0
-
Static Drain-Source On-Resistance RDS(ON)
-
Total Gate Charge2
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Qgd
-
Td(on)
-
Rise Time
Tr
-
Turn-off Delay Time
Td(off)
-
Fall Time
Tf
-
Input Capacitance
Ciss
-
Output Capacitance
Coss
-
Reverse Transfer Capacitance
Crss
-
-
600
VGS=4.5V, ID=1.2A
m
-
850
VGS=2.5V, ID=0.5A
1.2
2
ID=1.2A
0.4
-
nC VDS=16V
0.3
-
VGS=4.5V
17
-
VDS=10V
36
-
ID=1.2A
ns VGS=5V
76
-
RG=3.3
73
-
RD=10
37 60
VGS=0V
17
-
pF VDS=10V
13
-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol
VSD
Min.
-
Typ.
-
Max.
1.2
Unit
Test Conditions
V IS=1.2A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270к/W when mounted on min. copper pad.
2/4
 ▷