G2307 Datasheet, PDF (2/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

CORPORATION ISSUED DATE :2004/11/02
REVISED DATE :2005/10/13C
Electrical Characteristics (Tj = 25к Unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-16
Breakdown Voltage Temperature Coefficient
ϦBVDSS/ϦTj
-
Gate Threshold Voltage
VGS(th)
-
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=70к)
-
Static Drain-Source On-Resistance²
-
RDS(ON)
-
Total Gate Charge²
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time²
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
-
Qgs
-
Qgd
-
Td(on)
-
Tr
-
Td(off)
-
Tf
-
Ciss
-
Coss
-
Crss
-
-
-0.01
-
12
-
-
-
-
-
15
1.3
4
8
11
54
36
985
180
160
-
-
-1.0
-
±100
-1
-25
60
70
90
24
-
-
-
-
-
-
1580
-
-
V
V/к
V
S
nA
uA
uA
m
nC
ns
VGS=0, ID=-250uA
Reference to 25к, ID=-1mA
VDS= VGS, ID=-250uA
VDS=-5.0V, ID=-4.0A
VGS= ±8V
VDS=-16V, VGS=0
VDS=-12V, VGS=0
ID=-4.0A, VGS=-4.5V
ID=-3.0A, VGS=-2.5V
ID=-2.0A, VGS=-1.8V
ID=-4.0A
VDS=-12V
VGS=-4.5V
VDS=-10V
ID=-1A
VGS=-10V
RG=3.3
RD=10
VGS=0V
pF VDS=-15V
f=1.0MHz
Source-Drain Diode
Forward On Voltage²
Reverse Recovery Time²
Reverse Recovery Charge
VSD
-
-
-1.2
V
IS=-1.2A, VGS=0
Trr
-
39
-
ns
IS=-4.0A, VGS=0
Qrr
-
26
-
nC ^{dI/dt=100A/us}
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in² copper pad of FR4 board; 270к/W when mounted on min. copper pad.
Characteristics Curve
2/4