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| G2304A Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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ISSUED DATE :2005/03/21
REVISED DATE :
Electrical Characteristics(Tj = 25Ä Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
Gate Threshold Voltage
VGS(th)
1.0
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
-
V VGS=0, ID=250uA
0.1
-
V/к Reference to 25к, ID=1mA
-
3.0
V VDS=VGS, ID=250uA
2
-
S VDS=10V, ID=2.5A
-
Í100 nA VGS= Í20V
-
1
uA VDS=30V, VGS=0
-
10
uA VDS=24V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (âMillerâ) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Rg
Symbol
VSD
Trr
Qrr
-
-
-
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
3
0.8
1.8
5
9
11
2
120
62
24
1.67
Typ.
-
24
23
117
190
5
-
-
-
-
-
-
190
-
-
-
Max.
1.2
-
-
VGS=10V, ID=2.5A
mÓ¨
VGS=4.5V, ID=2.0A
ID=2.5A
nC VDS=24V
VGS=4.5V
VDS=15V
ID=1A
ns VGS=10V
RG=3.3Ó¨
RD=15Ó¨
VGS=0V
pF VDS=25V
f=1.0MHz
Ó¨ f=1.0MHz
Unit
Test Conditions
V IS=1.2A, VGS=0V
ns IS=2A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthÐ300us, duty cycleÐ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270к/W when mounted on min. copper pad.
2/4
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