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G1333 Datasheet, PDF (2/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET
◁
ISSUED DATE :2005/03/10
REVISED DATE :
Electrical Characteristics(Tj = 25ć Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS -20
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
Gate Threshold Voltage
VGS(th) -0.5
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
0.01
-
1
-
-
-
-
-
-1.2
-
̈́100
-1
-10
V VGS=0, ID=-250uA
V/к Reference to 25к, ID=-1mA
V VDS=VGS, ID=-250uA
S VDS=-5V, ID=-550mA
nA VGS= ̈́12V
uA VDS=-20V, VGS=0
uA VDS=-16V, VGS=0
-
Static Drain-Source On-Resistance RDS(ON)
-
-
600
VGS=-10V, ID=-550mA
-
800 mÓ¨ VGS=-4.5V, ID=-500mA
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
- 1000
VGS=-2.5V, ID=-300mA
Qg
-
1.7 2.7
ID=-500mA
Qgs
-
0.3
-
nC VDS=-16V
Qgd
-
0.4
-
VGS=-4.5V
Td(on)
-
5
-
VDS=-10V
Tr
-
8
-
ID=-500mA
ns VGS=-5V
Td(off)
-
10
-
RG=3.3Ó¨
Tf
-
2
-
RD=20Ó¨
Ciss
Coss
Crss
-
66 105.6
VGS=0V
-
25
-
pF VDS=-10V
-
20
-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol
VSD
Min.
-
Typ.
-
Max.
-1.2
Unit
Test Conditions
V IS=-300mA, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on FR4 board, tЉ10sec.
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