MSD602 Datasheet, PDF (1/1 Pages) E-Tech Electronics LTD – NPN General Purpose Amplifier Transistor Surface Mount

NPN General Purpose Amplifier
Transistor Surface Mount
COLLECTOR
3
MSD602–RT1
3
2
BASE
1
EMITTER
MAXIMUM RATINGS (T A = 25°C)
Rating
Symbol
Value
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current–Continuous
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
60
50
7.0
500
Collector Current–Peak
IC(P)
1.0
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Power Dissipation
Junction Temperature
Storage Temperature
PD
200
TJ
150
T stg
–55 ~ +150
ELECTRICAL CHARACTERISTICS (T A = 25°C)
Characteristic
Collector-Emitter Breakdown Voltage (I C = 10 mAdc, I B = 0)
Collector-Base Breakdown Voltage (I C = 10 µAdc, I E = 0)
Emitter-Base Breakdown Voltage (I E = 10 µAdc, I C = 0)
Collector-Base Cutoff Current (V CB = 20Vdc, I E = 0)
DC Current Gain ⁽¹⁾
(V CE = 10 Vdc, I C = 150 mAdc)
(V CE = 10 Vdc, I C = 500 mAdc)
Collector-Emitter Saturation Voltage (I C = 300 mAdc, I B = 30 mAdc)
Output Capacitance(VCB=10Vdc,IE=0,f=1.0MHz)
1. Pulse Test: Pulse Width < 300 µs, D.C < 2%.
Unit
Vdc
Vdc
Vdc
mAdc
Adc
Unit
mW
°C
°C
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
I CBO
hFE1
hFE2
VCE(sat)
Cob
1
2
CASE 318D–03, STYLE1
SC–59
Min
Max
Unit
50
—
Vdc
60
—
Vdc
7.0
—
Vdc
—
0.1
µAdc
—
120
240
40
—
—
0.6
Vdc
—
15
pF
DEVICE MARKING
Marking Symbol
WRX
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
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