MSD601 Datasheet, PDF (1/1 Pages) E-Tech Electronics LTD – NPN General Purpose Amplifier Transistors Surface Mount

NPN General Purpose Amplifier
Transistors Surface Mount
COLLECTOR
3
MSD601–RT1
MSD601–ST1
3
2
BASE
1
EMITTER
MAXIMUM RATINGS (T A = 25°C)
Rating
Symbol
Value
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current–Continuous
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
60
50
7.0
100
Collector Current–Peak
I C(P)
200
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Power Dissipation
Junction Temperature
Storage Temperature
PD
200
TJ
150
T stg
–55 ~ +150
ELECTRICAL CHARACTERISTICS (T A = 25°C)
Characteristic
Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, I B = 0)
Collector-Base Breakdown Voltage (I C = 10 µAdc, I E = 0)
Emitter-Base Breakdown Voltage (I E = 10 µAdc, I C = 0)
Collector-Base Cutoff Current (V CB = 45 Vdc, I E = 0)
Collector-Emitter Cutoff Current (V CE = 10 Vdc, I B = 0)
DC Current Gain ⁽¹⁾
(V CE = 10 Vdc, I C = 2.0 mAdc)
MSD601-RT1
MSD601-ST1
(V CE = 2.0 Vdc, I C = 100 mAdc)
Collector-Emitter Saturation Voltage (I C = 100 mAdc, I B = 10 mAdc)
1. Pulse Test: Pulse Width < 300 µs, D.C. < 2%.
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Unit
mW
°C
°C
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
I CBO
I CEO
hFE1
hFE2
VCE(sat)
DEVICE MARKING
1
2
CASE 318D–03, STYLE1
SC–59
Min
Max
Unit
50
—
Vdc
60
—
Vdc
7.0
—
Vdc
—
0.1
µAdc
—
100
nAdc
—
210
340
290
460
90
—
—
0.5
Vdc
YR^X
Marking Symbol
YS^X
MSD601–RT1
MSD601–ST1
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
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