MSA1022 Datasheet, PDF (1/1 Pages) E-Tech Electronics LTD – PNP RF Amplifier Transistor Surface Mount

PNP RF Amplifier Transistor
Surface Mount
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS (T A = 25 °C)
Rating
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
V CBO
V CEO
V EBO
IC
THERMAL CHARACTERISTICS
Characteristic
Symbol
Power Dissipation
PD
Junction Temperature
TJ
Storage Temperature
T stg
ELECTRICAL CHARACTERISTICS (T A = 25 °C)
Characteristic
Collector Cutoff Current
(V CB = –10 Vdc, I E = 0)
Collector-Emitter Breakdown Voltage
(V CE = –20 Vdc, I B = 0)
Emitter-Base Breakdown Voltage
(V EB = –5.0 Vdc, I C = 0)
DC Current Gain (1)
(V CE = –10 Vdc, I C = –1.0 mAdc)
Current-Gain - Bandwidth Product
(V CB = –10 Vdc, I E = 1.0 mAdc)
1. Pulse Test: Pulse Width < 300 µs, D.C. < 2%.
Value
–30
–20
–5.0
–30
Max
200
150
-55 ~ +150
Symbo
I CBO
I CEO
I EBO
h FE
fT
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
°C
°C
lMin
—
—
—
110
150
DEVICE MARKING
MSA1022–CT1
3
1
2
CASE 318D–03, STYLE1
SC–59
Max
–0.1
–100
–10
220
—
Unit
µAdc
µAdc
µAdc
—
MHz
Marking Symbol
ECX
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
N1–1/1