MMBV2101LT1 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Silicon Tuning Diode

Silicon Tuning Diode
These devices are designed in the popular PLASTIC PACK-
AGE for high volumerequirements of FM Radio and TV tuning and
AFC, general frequency control andtuning applications.They pro-
vide solid–state reliability in replacement of mechanical tuning
methods. Also available in Surface Mount Package up to 33pF.
• High Q
• Controlled and Uniform Tuning Ratio
• Standard Capacitance Tolerance —10%
• Complete Typical Design Curves
3
CATHODE
1
ANODE
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
6.8-100p
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
1
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating
Symbol MV21XX MMBV21XXLT1 Unit
Reverse Voltage
Forward Current
Device Dissipation @T _A = 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
V_R
30
Vdc
I_F
200
mAdc
P_D
280
225
mW
2.8
1.8
mW/°C
T_J
+150
°C
T _stg
–55 to +150
°C
MMBV2101LT1=M4G MMBV2107LT1=4W
MMBV2103LT1=4H
MMBV2105LT1=4U
MMBV2108LT1=4X
MMBV2109LT1=4J
ELECTRICAL CHARACTERISTICS(T_A=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Reverse Breakdown Voltage
(I_R=1.0µAdc)
V _(BR)R
30
—
Reverse Voltage Leakage Current
I_R
—
—
(V_R=25Vdc,T_A=25°C)
Diode Capacitance Temperature Coefficient
T _CC
—
280
(V_R=4.0Vdc,f=1.0MHz)
Max
—
0.1
—
Unit
Vdc
µAdc
ppm/°C
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