MMBT1010 Datasheet, PDF (1/1 Pages) E-Tech Electronics LTD – Low Saturation Voltage

Low Saturation Voltage
PNP Silicon Driver Transistors
Part of the GreenLine^TM Portfolio of devices with energy–conserving traits.
This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in
general purpose driver applications. This device is housed in the SOT-23 and
SC–59 packages which are designed for low power surface mount applications.
• Low V _CE(sat) , < 0.1 V at 50 mA
Applications
• LCD Backlight Driver
• Annunciator Driver
• General Output Device Driver
MAXIMUM RATINGS (T A = 25°C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current — Continuous
Symbol
V (BR)CBO
V (BR)CEO
V (BR)EBO
IC
Value
45
15
5.0
100
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
T A =25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature Range
DEVICE MARKING
Symbol
P D (1)
R θJA
TJ
T stg
Max
250
1.8
556
150
–55 —+150
Unit
mW
mW/°C
°C/W
°C
°C
MMBT1010LT1 = GLP; MSD1010T1 = GLP
ELECTRICAL CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Symbol
V (BR)CEO
V (BR)EBO
I CBO
I CEO
h FE1 (2)
V CE(sat)(2)
Base-Emitter Saturation Voltage
V BE(sat)(2)
Condition
I C = 10 mA, I B = 0
I E = 10 µA,I E = 0
V CB = 20 V, I E = 0
V CE = 10 V, I B = 0
V CE = 5 V,I C = 100 mA
I C = 10 mA, I B = 1.0 mA
I C = 50 mA, I B = 5.0 mA
I C = 100 mA, I B = 10 mA
I C = 100 mA, I B = 10 mA
MMBT1010LT1
MSD1010T1
PNP GENERAL
PURPOSE DRIVER
TRANSISTORS
SURFACE MOUNT
3
1
2
CASE 318–08, STYLE 6
SOT– 23
3
1
2
CASE 318D –04, STYLE 1
SC– 59
COLLECTOR
BASE
EMITTER
Min Max
Unit
15
—
Vdc
5.0
—
Vdc
—
0.1
µA
—
100
µA
300 600
—
—
0.1
Vdc
—
0.1
0.19
—
1.1
Vdc
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
(2) Pulse Test: Pulse Width <300 µs, D.C <2%.
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