M1MA151AT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – SC-59 PACKAGE SINGLE SILICON SWITCHING DIODES 40/80 V-100 mA SURFACE MOUNT

Single Silicon Switching Diodes
These Silicon Epitaxial Planar Diodes are designed for use
in ultra high speed switching applications. These devices are
housed in the SC-59 package which is designed for low power
surface mount applications.
• Fast t rr , < 3.0 ns
• Low C D , < 2.0 pF
• Available in 8 mm Tape and Reel
Use M1MA151/2AT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2AT3 to order the 13 inch/10,000 unit reel.
ANODE
3
M1MA151AT1
M1MA152AT1
SC-59 PACKAGE
SINGLE SILICON
SWITCHING DIODES
40/80 V-100mA
SURFACE MOUNT
3
2
1
CATHODE NO CONNECTION
2
1
CASE 318D–03, STYLE4
SC–59
MAXIMUM R ATINGS (T A = 25°C)
Rating
Reverse Voltage
M1MA151AT1
M1MA152AT1
Peak Reverse Voltage
M1MA151AT1
M1MA152AT1
Forward Current
Peak Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Rating
Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T A = 25°C)
Characteristic
Symbol
Reverse Voltage Leakage Current M1MA151AT1
IR
M1MA152AT1
Forward Voltage
Reverse Breakdown Voltage
VF
M1MA151AT1
VR
M1MA152AT1
Diode Capacitance
CD
Reverse Recovery Time
t (2)
rr
1. t = 1 SEC
2. t rr Test Circuit
Symbol
VR
V RM
IF
I FM
I ⁽¹⁾
FSM
Value
40
80
40
80
100
225
500
Unit
Vdc
Vdc
mAdc
mAdc
mAdc
Symbo
PD
TJ
T stg
lMax
200
150
-55 to +150
Unit
mW
°C
°C
Condition
Min
V R = 35 V
—
V R = 75 V
—
I F = 100 mA
—
I R = 100 µA
40
80
V R = 0, f = 1.0 MHz —
I F = 10 mA, V R = 6.0 V, —
R L = 100Ω, I rr = 0.1 I R
Max
0.1
0.1
1.2
—
—
2.0
3.0
Unit
µAdc
Vdc
Vdc
pF
ns
H1–1/2