GT6924E Datasheet, PDF (1/4 Pages) GTM CORPORATION – N-CHANNEL MOSFET WITH SWITCHING DIODE

Pb Free Plating Product
ISSUED DATE :2006/01/25
REVISED DATE :
GT6924E
N-CHANNEL MOSFET WITH SCHOTTKY DIODE
BVDSS
RDS(ON)
ID
20V
600m
1A
Description
The GM2306 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
Features
*Lower on-resistance
*Fast Switching Characteristic
*Included Schottky Diode
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage (MOSFET)
Gate-Source Voltage (MOSFET)
Continuous Drain Current³ (MOSFET)
Continuous Drain Current³ (MOSFET)
Pulsed Drain Current¹ (MOSFET)
Reverse Voltage (Schottky)
Average Forward Current (Schottky)
Pulsed Forward Current¹ (Schottky)
Total Power Dissipation (MOSFET)
Total Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D @TA=25к
I_D @TA=70к
I_DM
V_KA
I_F
I_FM
P_D @TA=25к
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient³ (MOSFET) Max.
Thermal Resistance Junction-ambient³ (Schottky) Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
0.30 0.55
0 0.10
0° 10°
REF.
G
H
I
J
K
L
Dimensions
Millimeter
1.90 REF.
1.20 REF.
0.12 REF.
0.37 REF.
0.60 REF.
0.95 REF.
Ratings
20
±6
1.0
0.8
8
20
0.5
2.0
0.9
0.9
-55 ~ +125
Value
110
110
Unit
V
V
A
A
A
V
A
A
W
W
к
Unit
к/W
к/W
GT6924E
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