GT2531 Datasheet, PDF (1/7 Pages) GTM CORPORATION – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2006/01/23
REVISED DATE :
GT2531
N-CH BVDSS 16V
N-CH RDS(ON) 58m
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH ID
P-CH BVDSS
3.5A
-16V
N-CH RDS(ON) 125m
Description
N-CH ID
-2.5A
The GT2531 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial surface mount applications.
Features
*Low Gate Change
*Low On-resistance
*RoHS Compliant
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
0.30 0.55
0 0.10
0° 10°
REF.
G
H
I
J
K
L
Dimensions
Millimeter
1.90 REF.
1.20 REF.
0.12 REF.
0.37 REF.
0.60 REF.
0.95 REF.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
N-channel P-channel
Drain-Source Voltage
V_DS
16
-16
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
V_GS
±8
±8
I_D @TA=25к
3.5
-2.5
I_D @TA=70к
2.8
-2.0
I_DM
10
-10
Total Power Dissipation
P_D @TA=25к
1.14
Linear Derating Factor
0.01
Operating Junction and Storage Temperature Range Tj, Tstg
-55 ~ +150
Unit
V
V
A
A
A
W
W/к
к
Thermal Data
Parameter
Thermal Resistance Junction-ambient³
Max.
Symbol
Rthj-a
Value
110
Unit
к/W
GT2531
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