GSMBTA64 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP SILICON TRANSISTOR

ISSUED DATE :2005/08/31
REVISED DATE :
G S M B TA6 4
PNP SILICON TRANSISTOR
Description
The GSMBTA64 is designed for application requiring extremely high current gain at collector to 500mA.
Features
Ô¦High D.C. Current Gain
Ô¦Complementary to GSMBTA14
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55~+150
ć
Collector to Base Voltage
VCBO
-30
V
Collector to Emitter Voltage
VCEO
-30
V
Emitter to Base Voltage
VEBO
-10
V
Collector Current
IC
-500
mA
Total Power Dissipation
PD
225
mW
Electrical Characteristics(Ta = 25к,unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-30
-
-
V
IC=-100uA, IE=0
BVCEO
-30
-
-
V
IC=-100uA, IB=0
BVEBO
-10
-
-
V
IE=-10uA, IC=0
ICBO
-
-
-100
nA
VCB=-30V, IE=0
IEBO
-
-
-100
nA
VEB=-10V, IC=0
*VCE(sat)
-
-
-1.5
V
IC=-100mA, IB=-0.1mA
*VBE(on)
-
-
-2
V
VCE=-5V, IC=-100mA
*hFE1
10K
-
-
VCE=-5V, IC=-10mA
*hFE2
20K
-
-
VCE=-5V, IC=-100mA
fT
125
-
-
MHz VCE=-5V, IC=-100mA, f=100MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GSMBTA56
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