GSMBTA44 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/08/31
REVISED DATE :
G S M B TA4 4
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GSMBTA44 is designed for application requires high voltage.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55~+150
ć
Collector to Base Voltage
VCBO
500
V
Collector to Emitter Voltage
VCEO
400
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
300
mA
Total Power Dissipation
PD
350
mW
Electrical Characteristics(Ta = 25к,unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
500
-
-
V
IC=100uA, IE=0
BVCEO
400
-
-
V
IC=1mA, IB=0
BVEBO
6
-
-
V
IE=10uA, IC=0
ICBO
-
-
100
nA
VCB=400V, IE=0
IEBO
-
-
100
nA
VEB=4V, IC=0
ICES
-
-
500
nA
VCE=400V, IB=0
*VCE(sat)1
-
-
375
mV IC=20mA, IB=2mA
*VCE(sat)2
-
-
750
mV IC=50mA, IB=5mA
*VBE(sat)
-
-
750
mV IC=10mA, IB=1mA
*hFE1
40
-
-
VCE=10V, IC=1mA
*hFE2
40
-
-
VCE=10V, IC=10mA
*hFE3
45
-
-
VCE=10V, IC=50mA
*hFE4
40
-
-
VCE=10V, IC=100mA
Cob
-
4
6
pF
VCB=20V, IE=0, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GSMBTA44
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