GSMBT8550 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL TRANSISTOR

GSMBT8550
PNP EPITAXIAL TRANSISTOR
Description
The GSMBT8550 is designed for general purpose amplifier applications.
Package Dimensions
ISSUED DATE :2005/08/31
REVISED DATE :
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55~+150
ć
Collector to Base Voltage
VCBO
-25
V
Collector to Emitter Voltage
VCEO
-20
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current
IC
-700
mA
Total Power Dissipation
PD
225
mW
Electrical Characteristics(Ta = 25к,unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-25
-
-
V
IC=-10uA, IE=0
BVCEO
-20
-
-
V
IC=-1mA, IB=0
BVEBO
-5
-
-
V
IE=-10uA, IC=0
ICBO
-
-
-1
uA
VCB=-20V, IE=0
IEBO
-
-
-100
nA
VEB=-5V, IC=0
VCE(sat)
-
-
-500
mV IC=-500mA, IB=-50mA
VBE(on)
-
-
-1
V
VCE=-1V, IC=-150mA
hFE
100
-
500
VCE=-1V, IC=-150mA
fT
150
-
-
MHz VCE=-10V, IC=-20mA, f=100MHz
Cob
-
-
10
pF
VCB=-10V, f=1MHz
Classification Of hFE
Rank
Range
B9C
100 ~ 200
B9D
150 ~ 300
B9E
250 ~ 500
GSMBT8550
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