GSMBT5551 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/08/31
REVISED DATE :
GSMBT5551
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GSMBT5551 is designed for general purpose applications requiring high breakdown voltage.
Features
Ô¦High Collector-Emitter Breakdown Voltage (BVCEO=160V @ IC=1mA)
Ô¦Complementary to GSMBT5401
Package Dimensions
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Electrical Characteristics (Ta = 25ć)
Symbol
BVCBO
Min.
180
Typ.
-
Max.
-
BVCEO
BVEBO
160
-
-
6
-
-
ICBO
-
-
50
IEBO
-
-
50
*VCE(sat)1
*VCE(sat)2
-
-
150
-
-
200
*VBE(sat)1
*VBE(sat)2
-
-
1
-
-
1
*hFE1
80
-
-
*hFE2
80
-
250
*hFE3
30
-
-
fT
100
-
300
Cob
-
-
6
Unit
V
V
V
nA
nA
mV
mV
V
V
MHz
pF
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Ratings
+150
-55~+150
180
160
6
600
225
Unit
ć
ć
V
V
V
mA
mW
Test Conditions
IC=100uA , IE=0
IC=1mA, IB=0
IE=10uA ,IC=0
VCB=120V, IE=0
VEB=4V, IC=0
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GSMBT5551
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