GSMBT5089 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/08/31
REVISED DATE :
GSMBT5089
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GSMBT5089 is designed for low noise, high gain and general purpose amplifier applications.
Package Dimensions
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Electrical Characteristics (Ta = 25ć)
Symbol
Min.
Typ.
Max.
BVCBO
30
-
-
BVCEO
25
-
-
BVEBO
4.5
-
-
ICBO
-
-
50
IEBO
-
-
100
*VCE(sat)
-
-
500
*VBE(sat)
-
-
800
*hFE1
400
-
1200
*hFE2
450
-
-
*hFE3
400
-
-
fT
50
-
-
Cob
-
-
4.0
Unit
V
V
V
nA
nA
mV
mV
MHz
pF
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Ratings
+150
-55~+150
30
25
4.5
50
225
Unit
ć
ć
V
V
V
mA
mW
Test Conditions
IC=100uA , IE=0
IC=1mA, IB=0
IE=10uA ,IC=0
VCB=15V, IE=0
VEB=4.5V, IC=0
IC=10mA, IB=1mA
IC=10mA, IB=1mA
VCE=5V, IC=0.1mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=0.5mA, f=20MHz
VCB=5V, IE=0, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
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