GSMBT4076 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/07/22
REVISED DATE :
GSMBT4076
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GSMBT4076 is designed for general purpose switching and amplifier applications.
Features
Ô¦Excellent hFE Linearity : hFE2=25 (Min.) @VCE=6v, IC=400mA
Ô¦Complementary to GSMBT2015
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Base Current
IB
Total Power Dissipation
PD
Ratings
+150
-55~+150
35
30
5
500
50
250
Unit
ć
ć
V
V
V
mA
mA
mW
Electrical Characteristics (Ta = 25ć)
Symbol
Min.
Typ.
Max.
BVCBO
35
-
-
BVCEO
30
-
-
BVEBO
5
-
-
ICBO
-
-
100
IEBO
-
-
100
*VCE(sat)
-
-
250
*VBE(sat)
-
-
1.2
*hFE1
70
-
240
*hFE2
25
-
-
fT
250
-
-
Cob
-
-
6.5
Unit
V
V
V
nA
nA
mV
V
MHz
pF
Classification Of hFE
Rank
hFE1 Range
hFE2 Range
WO
70 - 140
Min. 25
WY
120 - 240
Min. 40
Test Conditions
IC=100uA , IE=0
IC=1mA, IB=0
IE=10uA ,IC=0
VCB=35V, IE=0
VEB=5V, IC=0
IC=100mA, IB=10mA
IC=500mA, IB=50mA
VCE=1V, IC=100mA
VCE=6V, IC=400mA
VCE=10V, IC=20mA, f=100MHz
VCB=10V, IE=0, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
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