GSMBT4075 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/07/22
REVISED DATE :
GSMBT4075
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GSMBT4075 is designed for general purpose switching and amplifier applications.
Features
Ô¦Excellent hFE Linearity : hFE (0.1mA)/ hFE (2mA)=0.95 (Typ.)
Ô¦High hFE : hFE = 70~700
Ô¦Complementary to GSMBT2014
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Base Current
IB
Total Power Dissipation
PD
Ratings
+150
-55~+150
60
50
5
150
30
225
Unit
ć
ć
V
V
V
mA
mA
mW
Electrical Characteristics (Ta = 25ć)
Symbol
Min.
Typ.
Max.
BVCBO
60
-
-
BVCEO
50
-
-
BVEBO
5
-
-
ICBO
-
-
100
IEBO
-
-
100
*VCE(sat)
-
-
250
*VBE(sat)
-
-
1
*hFE1
70
-
700
*hFE2
25
-
-
fT
80
-
-
Cob
-
-
3.5
Unit
V
V
V
nA
nA
mV
V
MHz
pF
Classification Of hFE1
Rank
LO
Range
70 - 140
LY
120 - 240
Test Conditions
IC=100uA , IE=0
IC=1mA, IB=0
IE=10uA ,IC=0
VCB=60V, IE=0
VEB=5V, IC=0
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=2mA
VCE=6V, IC=150mA
VCE=10V, IC=1mA, f=100MHz
VCB=10V, IE=0, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
LG
200 - 400
LB
350 - 700
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