GSMBT2907A Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2004/12/22
REVISED DATE :
GSM BT2907A _{PNP EPITAXIAL PLANAR TRANSISTOR}
Description
The GSMBT2907A is designed for general purpose amplifier and high speed, medium-power switching applications.
Features
Ô¦Low collector saturation voltage
Ô¦High speed switching
Ô¦For complementary use with NPN type GSMBT2222A
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Symbol
Tj
Storage Temperature
Collector to Base Voltage at Ta=25к
Collector to Emitter Voltage at Ta=25к
Emitter to Base Voltage at Ta=25к
Collector Current at Ta=25к
Total Power Dissipation at Ta=25к
Tstg
VCBO
VCEO
VEBO
IC
PD
Characteristics at Ta = 25к
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
-60
-60
-5
-
-
-
-
-
-
75
100
100
100
50
200
-
Typ.
-
-
-
-
-
-0.2
-0.5
-
-
-
-
-
180
-
-
-
Max.
-
-
-
-10
-50
-0.4
-1.6
-1.3
-2.6
-
-
-
300
-
-
8.0
Unit
V
V
V
nA
nA
V
V
mV
V
MHz
pF
Ratings
Unit
+150
ć
-55 ~ +150
ć
-60
V
-60
V
-5
V
-600
mA
225
mW
Test Conditions
IC=-10uA
IC=-10mA
IE=-10uA
VCE=-50V
VCE=-30V, VBE=-0.5V
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
VCE=-10V, IC=-0.1mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-150mA
VCE=-10V, IC=-500mA
VCE=-20V, IC=-50mA, f=100MHz
VCE=-10V, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
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