GSMBT1015 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

GSMBT1015
ISSUED DATE :2004/12/08
REVISED DATE :
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GSMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
Collector Current
IC
Total Power Dissipation
PD
Characteristics at Ta = 25к
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
Min.
-50
-50
-5
-
-
-
Typ.
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-300
*VBE(sat)
*hFE1
*hFE2
fT
Cob
-
-
-1.1
120
-
700
25
-
-
80
-
-
-
-
7
Classification Of hFE1
Rank
Range
A4Y
120-140
Unit
V
V
V
nA
nA
mV
V
MHz
pF
Ratings
Unit
+150
ć
-55~+150
ć
-50
V
-50
V
-5
V
-150
mA
225
mW
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-50V
VEB=-5V
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-6V, IC=-2mA
VCE=-6V, IC=-150mA
VCE=-10V, IC=-1mA, f=100MHz
VCB=-10V, f=1MHz,IE=0
* Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%
A4G
200-400
A4B
350-700
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