GSD965AA Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2005/02/17
REVISED DATE :
GSD965AA NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GSD965AA is designed for use as AF output amplifier and flash unit.
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
Absolute Maximum Ratings at Ta = 25ć
Collector to Base Voltage
BVCBO
Collector to Emitter Voltage
BVCEO
Emitter to Base Voltage
BVEBO
Collector Current (Continuous)
IC
Collector Current (Peak PT=10mS)
IC
Junction Temperature
Tj
Storage Temperature
Tstg
Total Power Dissipation at Ta = 25к
PD
Characteristics at Ta = 25ć
Symbol
Min.
Typ.
BVCBO
60
-
BVCEO
30
-
BVEBO
7
-
VCEV
60
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*hFE1
230
-
*hFE2
150
-
fT
-
150
Cob
-
-
Max.
-
-
-
-
100
100
0.5
800
-
-
50
Classification Of hFE1
Rank
Q
Range
230-380
R
340-600
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02
-
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
60
V
30
V
7.0
V
5
A
8
A
+150
ć
-55 ~ +150
ć
0.75
W
Unit
V
V
V
V
nA
nA
V
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VEB=0.6V
VCB=60V
VEB=7V
IC=1A, IB=0.1A
VCE=2V, IC=0.5A
VCE=2V, IC=2A
VCE=6V, IE=50mA
VCB=20V, f=1MHz
* Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%
S
560-800
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