GSD965 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2004/04/05
REVISED DATE :2004/11/29B
GSD965
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GSD965 is designed for use as AF output amplifier and flash unit
Package Dimensions
D
E
S1
TO-92
b1
SE A T IN G
PLANE
C
e1
b
e
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02
-
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Absolute Maximum Ratings at Ta = 25ć
Collector to Base Voltage
BVCBO
40
V
Collector to Emitter Voltage
BVCEO
20
V
Emitter to Base Voltage
BVEBO
7.0
V
Collector Current (Continuous)
IC
5
A
Collector Current (Peak PT=10mS)
IC
8
A
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55 ~ +150
ć
Total Power Dissipation at Ta = 25к
PD
0.75
W
Characteristics at Ta = 25ć
Symbol
Min.
Typ.
BVCBO
40
-
BVCEO
20
-
BVEBO
7
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
0.35
*hFE1
230
-
*hFE2
150
-
fT
-
150
Cob
-
-
Max.
-
-
-
0.1
0.1
1
800
-
-
50
Classification Of hFE1
Rank
Q
Range
230-380
R
340-600
Unit
V
V
V
uA
uA
V
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=60V
VEB=7V
IC=3A, IB=0.1A
VCE=2V, IC=0.5A
VCE=2V, IC=2A
VCE=6V, IE=50mA
VCB=20V, f=1MHz
* Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%
S
560-800
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