GSD882SS Datasheet, PDF (1/3 Pages) E-Tech Electronics LTD – N P N E P I TA X I A L P L A N A R T R A N S I S TO R

ISSUED DATE :2005/11/07
REVISED DATE :
GSD882SS
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GSD882SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter
and voltage regulator.
Features
Ô¦High current output up to 3A
Ô¦Low saturation voltage
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Symbol
Tj
Storage Temperature Range
TsTG
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collect Current(DC)
IC
Total Power Dissipation
PD
Electrical Characteristics (Ta = 25к)
Symbol
Min.
Typ.
Max.
BVCBO
40
-
-
BVCEO
30
-
-
BVEBO
5
-
-
ICBO
-
-
1
IEBO
-
-
1
*VCE(sat)
-
-
0.5
*VBE(sat)
-
-
2.0
*hFE1
30
-
-
*hFE2
100
-
500
fT
-
90
-
Cob
-
45
-
Classification Of hFE2
Rank
Q
Range
100 - 200
P
160 - 320
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Ratings
Unit
+150
к
-55 ~ +150
к
40
V
30
V
5
V
3
A
750
mW
Unit
V
V
V
uA
uA
V
V
MHz
pF
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=30V, IE=0
VEB=3V, IC=0
IC=2A, IB=200mA
IC=2A, IB=200mA
VCE=2V, IC=20mA
VCE=2V, IC=1A
VCE=5V, IC=100mA, f=100MHz
VCB=10V, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
E
200 - 500
GSD882SS
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