GSD1616A Datasheet, PDF (1/3 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2003/10/23
REVISED DATE :2004/11/29B
GSD1616A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GSD1616A is designed for audio frequency power amplifier and medium speed switching.
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
Absolute Maximum Ratings Ta = 25к
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Collect Current*(Pulse)
Junction Temperature
Storage Temperature Range
Total Power Dissipation
VCBO
VCEO
VEBO
IC
IC
Tj
TsTG
PD
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02
-
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Ratings
Unit
120
V
60
V
6
V
1
A
2
A
+150
ć
-55 ~ +150
ć
750
mW
Characteristics at Ta = 25ć
Symbol
Min.
Typ.
Max.
Unit
BVCBO
120
-
-
V
BVCEO
60
-
-
V
BVEBO
6
-
-
V
ICBO
-
-
100
nA
IEBO
-
100
nA
*VCE(sat)
-
150
300
mV
*VBE(sat)
-
0.9
1.2
mV
VBE(on)
600
640
700
mV
*hFE1
135
-
600
*hFE2
81
-
-
fT
100
160
-
MHz
Cob
-
-
19
pF
ton
-
0.07
-
uS
ts
-
0.95
-
uS
tf
-
0.07
-
uS
Classification of hFE1
Rank
Y
Range
135-270
G
200-400
L
300-600
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VBE=60V
VBE=6V
lC=1A,IB=50mA
IC=1A, IB=50mA
VCE=2V,IC=50mA
VCE=2V,IC=100mA
VCE=2V,IC=1A
VCE=2V,IC=100mA
VCB=10V ,IE=0,f=1MHz
VCE=10V,IC=100mA
IB1=-IB2=10mA
VBE(off)=2~-3V
*Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%
GSD1616A
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