GSC4081 Datasheet, PDF (1/3 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/02/18
REVISED DATE :
GSC4081
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GSC4081 is designed for use in driver stage of AF amplifier and general purpose amplification.
Features
Ô¦Low Cob. Cob=2.0 pF (Typ.)
Ô¦Complements the GSA1576A
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55~+150
ć
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
7
V
Collector Current
IC
150
mA
Total Power Dissipation
PD
225
mW
Characteristics at Ta = 25к
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
60
50
7
-
-
-
120
-
-
Typ.
-
-
-
-
-
-
-
180
2
Max.
-
-
-
100
100
400
560
-
3.5
Unit
V
V
V
nA
nA
mV
MHz
pF
Test Conditions
IC=50uA
IC=1mA
IE=50uA
VCB=60V
VEB=7V
IC=50mA, IB=5mA
VCE=6V, IC=1mA
VCE=12V, IC=2mA, f=100MHz
VCB=12V, f=1MHz,IE=0
Classification Of hFE
Rank
Range
5BQ
120 - 270
* Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%
5BR
180 - 390
5BS
270 - 560
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