GSC1384 Datasheet, PDF (1/3 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

GSC1384
ISSUED DATE :2003/10/24
REVISED DATE :2004/11/29B
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NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GSC1384 is designed for power amplifier and driver.
Features
*Low collector to emitter saturation voltage VCE(sat).
*Complementary pair with GSA684
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02
-
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)
Parameter
Ratings
Unit
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
5
V
Collect Current(DC)
IC
1
A
Collect Current*(Pulse)
ICP
1.5
A
Junction Temperature
Tj
+150
ć
Storage Temperature Range
TsTG
-55 ~ +150
ć
Total Power Dissipation
PD
1
W
Electrical Characteristics (Ta = 25к,unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
VCBO
60
-
-
VCEO
50
-
-
V
IC=10uA,IE=0
V
IC=2mA,IB=0
VEBO
5
-
-
V
IE=10uA,IC=0
ICBO
-
-
0.1
uA
VCB=20V,IE=0
VCE(sat)
-
200
400
mV
lC=0.5A,IB=50mA(note)
VBE(sat)
-
0.85
1.2
V
IC=0.5A, IB=50mA(note)
*hFE1
85
160
340
VCE=10V,IC=500mA(note)
*hFE2
50
100
-
VCE=5V,IC=1A(note)
fT
-
200
-
MHz
VCE=10V,IB=-50mA,f=200MHz
Cob
-
11
20
pF
VCB=10V,IE=0,f=1MHz
Note: Pulse measurement
Classification Of hFE1
Rank
Range
Q
85-170
R
120-240
S
170-340
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