GSBC858 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/06/08
REVISED DATE :
GSBC858
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GSBC858 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55 ~ +150
ć
Collector to Base Voltage
VCBO
-30
V
Collector to Emitter Voltage
VCEO
-30
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current
IC
100
mA
Total Power Dissipation
PD
225
mW
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICBO
VCE(sat)1
VCE(sat)2
Min.
-30
-30
-5
-
-
-
VBE(sat)1
VBE(sat)2
VBE(on)1
VBE(on)2
hFE
fT
Cob
-
-
-600
-
110
-
-
Ta = 25к
Typ.
-
-
-
-
-90
-250
-700
-900
-
-
-
150
-
Max.
-
-
-
-15
-300
-650
-
-
-750
-820
800
-
6
Unit
V
V
V
nA
mV
mV
mV
mV
mV
mV
MHz
pF
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-30V
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
VCE=-5V, IC=-2mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-2mA
VCE=-5V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz, IE=0A
Classification Of hFE
Rank
9CA
Range
110 - 220
9CB
200 - 450
9CC
420 – 800
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