GSBC847 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/01/21
REVISED DATE :
GSBC847
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GSBC847 is designed for switching and AF amplifier application suitable for automatic insertion in thick and thin-film circuits.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55 ~ +150
ć
Collector to Base Voltage
VCBO
50
V
Collector to Emitter Voltage
VCEO
45
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
100
mA
Total Power Dissipation
PD
225
mW
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
Min.
50
45
6
ICBO
-
VCE(sat)1
-
VCE(sat)2
-
VBE(sat)1
-
VBE(sat)2
-
VBE(on)1
580
VBE(on)2
-
hFE
110
fT
-
Cob
-
Ta = 25к
Typ.
-
-
-
-
90
200
700
900
-
-
-
300
3.5
Max.
-
-
-
15
250
600
-
-
700
770
800
-
6
Unit
V
V
V
nA
mV
mV
mV
mV
mV
mV
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=30V
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCB=10V, f=1MHz, IE=0A
Classification Of hFE
Rank
Range
8BA
110 - 220
8BB
200 - 450
8BC
420 - 800
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