GSBAT54-A-C-S Datasheet, PDF (1/2 Pages) E-Tech Electronics LTD – S U R FA C E MO U N T, S C H O T T K Y B A R R I E R D I O D E V O LTAG E 3 0 V, C U R R E N T 2 0 0mA

ISSUED DATE :2005/01/05
REVISED DATE :
G S B AT 5 4 / A/ C / S
S U RFAC E MO U NT, S CH OTT K Y B AR R I ER D IO DE
VOLTAGE 30V, CURRENT 200mA
Description
These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BCS.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
-55 ~ +125
ć
Storage Temperature
Tstg
-55 ~ +150
ć
Peak Repetitive Reverse Voltage
VR
30
V
Forward Continuous Current
IF
200
mA
Peak Repetitive Forward Current
IFRM
300
mA
Surge Forward Current(tЉ1.0s)
IFSM
600
mA
Total Power Dissipation at Ta = 25к
PD
225
mW
Characteristics at Ta = 25к
characteristics
Symbol
Min
Reverse Breakdown Voltage
V(BR)R
30
VF(1)
-
VF(2)
-
Forward Voltage
VF(3)
-
VF(4)
-
VF(5)
-
Reverse Leakage Current
IR
-
Total Capacitance
CT
-
Reverse Recover Time
Trr
-
Max.
-
240
320
400
500
1000
2.0
10
5
Unit
Test Conditions
V
IR=10 A
mV IF=0.1mA
mV IF=1mA
mV IF=10mA
mV IF=30mA
mV IF=100mA
A VR=25V
pF
VR=1V, f=1MHz
ns
IF=IR=10mA, IR(Rec)=1mA
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