GSB772S Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2004/09/13
REVISED DATE :2004/11/29B
GSB772S
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GSB772S is designed for using in output stage of 0.75W amplifier, voltage regulator, DC-DC converter and driver.
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage at Ta=25к
Collector to Emitter Voltage at Ta=25к
Emitter to Base Voltage at Ta=25к
Collector Current at Ta=25к
Total Power Dissipation at Ta=25к
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Characteristics at Ta = 25к
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
-40
-30
-5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
-0.3
-1
-
160
80
55
Max.
-
-
-
-1
-1
-0.5
-2
-
500
-
-
Classification Of hFE2
Rank
Range
Q
100-200
P
160-320
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Ratings
Unit
+150
ć
-55 ~ +150
ć
-40
V
-30
V
-5.0
V
-3.0
A
750
mW
Unit
V
V
V
uA
uA
V
V
MHz
Pf
Test Conditions
IC=-100uA
IC=-10mA
IE=-10uA
VCB=-30V
VEB=-3V
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
VCE=-20V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%
E
250-500
1/2