GSB1132 Datasheet, PDF (1/3 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

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GSB1132
PNP EPITAXIAL SILICON TRANSISTOR
Description
The GSB1132 is a epitaxial planar type PNP silicon transistor .
Features
Low VCE(sat). VCE(sat) = -0.2V(Typ.) (IC/IB = -500mA / -50 mA)
Package Dimensions
REF.
A
Millimeter
Min. Max.
4.4
4.6
REF.
G
Millimeter
Min. Max.
3.00 REF.
B 4.05 4.25 H
1.50 REF.
C 1.50 1.70 I 0.40 0.52
D 1.30 1.50 J 1.40 1.60
E 2.40 2.60 K 0.35 0.41
F 0.89 1.20 L
5q TYP.
M
0.70 REF.
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55 ~ +150
ć
Collector to Base Voltage
VCBO
-40
V
Collector to Emitter Voltage
VCEO
-32
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current(DC)
IC
-1
A
Collector Current(PULSE) (note1)
IC
-2
A
Collector Power Dissipation
PD
0.5
W
Collector Power Dissipation (note2)
PD
2
W
Note 1:Single pulse, PW=100ms
Note 2: When mounted on a 40*40*0.7 mm ceramic board.
Electrical Characteristics (Ta = 25к,unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-40
-
-
V
IC=-50uA
BVCEO
-32
-
-
V
IC=-1mA
BVEBO
-5
-
-
V
IE=-50uA
ICBO
-
-
-0.5
uA
VCB=-20V
IEBO
-
-
-0.5
uA
VEB=-4V
VCE(sat)
-
-0.2
-0.5
V
IC=-500mA, IB=-50mA(note)
hFE
82
-
390
VCE=-3V, IC=-100mA
fT
-
150
-
MHz VCE=-5V, IE=-50mA, f=30MHz
Cob
-
20
30
pF
VCE=-10V, IE=0A, f=1MHz
Note: Measured using pulse current.
Classification Of hFE
Rank
RANGE
P
82 - 180
Q
120 - 270
R
180 - 390